Browsing by Author "Demir, Ilkay"
Now showing items 1-8 of 8
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Comprehensive growth and characterization study on highly n-doped InGaAs as a contact layer for quantum cascade laser applications
Demir, Ilkay; Altuntas, Ismail; Bulut, Baris; Ezzedini, Maher; Ergun, Yuksel; Elagoz, Sezai (IOP PUBLISHING LTD, 2018)We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced ... -
The contribution of AsH3: Pre-flow and V/III ratio effects on heteroepitaxially grown GaAs/Ge
Demir, Ilkay (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2019)We report the effects of AsH3 (arsine) on morphological, structural, optical and crystalline quality of MOVPE (metal organic vapor phase epitaxy) grown GaAs/Ge heterostructures. AsH3 pre-flow supplied on Ge substrate to ... -
Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy
Demir, Ilkay; Robin, Yoann; McClintock, Ryan; Elagoz, Sezai; Zekentes, Konstantinos; Razeghi, Manijeh (WILEY-V C H VERLAG GMBH, 2017)AlN layers have been grown on 200 nm period of nano-patterned Si (111) substrates by cantilever epitaxy and compared with AlN layers grown by maskless lateral epitaxial overgrowth (LEO) on micropatterned Si (111) substrates. ... -
The effects of two-stage HT-GaN growth with different V/III ratios during 3D-2D transition
Altuntas, Ismail; Demir, Ilkay; Kasapoglu, Ahmet Emre; Mobtakeri, Soheil; Gur, Emre; Elagoz, Sezai (IOP PUBLISHING LTD, 2018)The aim of the study is to understand the effects of two stages of HT-GaN growth with different V/III ratios on optical, chemical and structural characteristics of the HT-GaN layer. In addition, the effects of two-stage ... -
Growth of InGaAs/InAlAs superlattices by MOCVD and precise thickness determination via HRXRD
Demir, Ilkay; Elagoz, Sezai (GAZI UNIV, 2016)In this study, we report the growth studies of InGaAs/InAlAs superlattices (SLs) with thin layer thicknesses which will be used for quantum cascade laser (QCL) structures, grown by Metal Organic Chemical Vapor Deposition ... -
High brightness ultraviolet light-emitting diodes grown on patterned silicon substrate
Robin, Yoann; Ding, Kai; Demir, Ilkay; McClintock, Ryan; Elagoz, Sezai; Razeghi, Manijeh (ELSEVIER SCI LTD, 2019)We report on the fabrication of high brightness AlGaN-based ultraviolet light emitting diodes (UV-LED) on patterned silicon. Using the lateral epitaxial overgrowth approach, we demonstrate the growth of a 6 mu m thick AIN ... -
Interruption time effects on InGaAs/InAlAs superlattices of quantum cascade laser structures grown by MOCVD
Demir, Ilkay; Elagoz, Sezai (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2016)We report the growth of high quality InGaAs/InAlAs quantum cascade laser (QCL) structure which composed of superlattices (SLs) and the effects of interruption time between each layer of the SL structure. Inserting an ... -
V/III ratio effects on high quality InAlAs for quantum cascade laser structures
Demir, Ilkay; Elagoz, Sezai (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2017)In this study we report the VIII ratio effects on growth, structural, optical and doping characteristics of low growth rate (similar to 1 angstrom/s) heteroepitaxial Metal Organic Chemical Vapor Deposition (MOCVD) grown ...